[软硬件开发]EDI CON Experts Present State-of-the-Art Techniques to Address RF Power Amplifier Efficiency and Lin

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The efficiency and linear performance of RF power =3dR-3  
amplifiers using traditional architectures may be unacceptable for future Fxx-2(U  
wideband LTE-Advanced applications. Consequently, extensive efforts are underway ]k#iA9I  
within the wireless industry to enhance these metrics by a variety of techniques E'cI}q  
e.g. Doherty, envelope tracking etc.  Such techniques have been reported to 'D:R]@eK]  
improve overall amplifier performance significantly. Considerations of new RF PA <5]ufv  
architectures and design techniques for wideband wireless applications will be A:4?Jd>  
the focus of several technical sessions and workshops offered by international NyR,@n1  
experts presenting at the Electronic Design
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Innovations Conference (EDI CON)  from March 12 -14 at the Beijing ;@FCaj&  
International convention Center. v vzPt.ag  
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Join RFIC /MMIC semiconductor design engineers from Freescale, TriQuint, + usB$=kJ  
Nitronex, M/A-Com Technology Solutions, and Microsemi as well as RF RDA :LxsiDrF[  
simulation experts from Agilent and AWR as they discuss the challenges and $e, N5/O  
opportunities enhanced PA performance for wideband applications. Mc9JFzp  
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Technical Sessions =1+/`w  

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• Wide Dynamic Range Multi-Nested Envelope Tracking Power Amplifier +:kMYL3  
  for LTE Application cw/E?0MWb  
  By Zhancang Wang, IEEE Member HJ+Q7)  
  
• A High-Efficiency, Small-Size GaN Doherty Amplifier for LTE @:Emmzucv|  
  Micro-Cell and Active Antenna System Applications
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  By  Yu (Peter) Xia {l9g
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  and Milos Jankovic, TriQuint Semiconductor v];P| Fi  
  
• High Efficiency Inverse Class-F Amplifier Design for Envelope H{4_,2h=m  
  Tracking Line-up Driver {`ByZB  
  By Zhancang Wang, Li Wang, Rui Ma, S. [:gp_Z&  
  Lanfranco, Nokia Network Systems mfx-Ja_a  
  
• Linearizing GaN Microwave Power Amplifiers Using RF JI[{n~bhGD  
  Pre-distortion dlRTxb^Y>u  
  By Mendy Ouzillou, Scintera D%*Ryg  
  
• A Robust 75W, 48V, 0.02-1.0 GHz Broadband GaN -A^o5s  
  Amplifier jRN>^Ur;g  
  Presented by Xinjian Zhao GaN MMIC Power Amplifier Design f=IF_|@
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  Engineer, Nitronex ):]5WHYg  
  
• Simulating an NXP Doherty Power Amplifier with Digital EYRg,U&'  
  Pre-Distortion

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Presented by Dr. John Dunn, AWR p5aqlYb6r  

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• Challenges in the Design and Selection of Power Broadband f7b6!R;z_  
  Amplifiers lFN|)(X  
  By Wolfram Titze, Rohde & Schwarz

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Workshops #H]c/  

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• Doherty Power Amplifier T .. `b KJ  
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