[仿真]ieee上一篇低噪声放大器设计文章

是一片英文文献 m`i_O0T  
y0vJ@ %`  

---

$UNC0(4  
Wang Xiao-mei; Sun Zhengwen; Chen Yong; Wang Sixiu; , "Design of X-band low-noise amplifier for optimum matching between noise and power," Education Technology and Computer (ICETC), 2010 2nd International Conference on , vol.5, no., pp.V5-184-V5-188, 22-24 June 2010 mtU{d^B  
hL4T7`  
doi: 10.1109/ICETC.2010.5529786 Hlhd6be  
e"oTlB  
Abstract: High Electron Mobility Transistors (HEMT) plays a crucial role in microwave low noise receivers. Low noise HEMTs are used extensively in the ultra low noise amplifier (LNAs). Design the LNA is difficult for the radio astronomical observations, especially the realization of the simultaneous about the noise matching and the power matching, as well as the full band unconditional stability. With the Agilent Advanced Design System (ADS) simulation tools, the X-band three-stage LNA using NEC-NE3210S01 HEMTs has been designed: Noise Figure<;0.6dB; power Gain>30dB at X- .. tGE=!qk  
4)"S/u  

未注册仅能浏览部分内容，查看全部内容及附件请先 登录 或 注册

ey35y35u53u45u

顶一个

学学 ]rG=\>U3~  

看看，正好在做放大器

学习学习。。。 @!$xSH  

学习学习！！！

好好好好好好好

你

各位大神们行行好吧