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2.3.1 Gallium Arsenide (GaAs) Q eeV< 2.3.2 GaAs / Si Comparison )6|L]'dsZ 2.3.3 InP K$E3RB_F 2.3.4 Other III-V Compound Semiconductors GES}o9?# 2.3.5 InGaAs
2.5.1Crystal Growth &L o TO+ 2.5.2Epitaxy bO~y=Pa \ 2.5.3Ion Implantation mHD_cgKN 2.5.4GaAs Dopants eP{srP3 9 2.5.5Schottky and Ohmic Contacts
2.6.1 Schematic Optimisation Consistent with Good mm-Wave Layout Practice H]TdW;ZbZ 2.6.2 Consideration of Foundry Element Limitations G0FzXtu)q 2.6.3 Probing Considerations l|5 h 2.6.4 Dicing/Sawing Considerations Na\ZV|;*tu 2.6.5 Packaging Impact on Performance
3.2.1 Background i'tMpS3 3.2.2 Schottky Diode uF ?[H -y 3.2.3 MESFET 3%WB?k c 3.2.4 Modern FET Variants :]3X Ez 3.2.5 FET Equivalent Circuit N? G TfN 3.2.6 Fundamental FET Circuit Relationships p R0[qsQM 3.2.7 GaAs Hetero-Junction Bipolar Transistor #3uv^m LGa 3.2.8 Silicon based High Frequency Devices and Circuits
4.2.1 Existing Solutions ,'L>:pF3 4.2.2 Monolithic Solution
5.1 Introduction W4$o\yA] 5.2 Conventional 57.2 – 58.2 GHz LNA Development sXLW';Fz 5.2.1 Introduction {Jr1K, 5.2.2 57 GHz LNA Design Details 5LeZ ?'"c 5.2.3 57 GHz LNA Characterisation A40DbD\^ad 5.2.4 Discussion 9QZaa(vN 5.3 New LNA Design Methodology mz?<t/$U 5.3.1 Considerations at mm-Waves #2Rz=QI 5.3.2 Device Stabilisation '' 17(% 5.3.3 Packaging Considerations u?').c4 5.3.4 Noise/Match Tradeoff >XN[KPTa 5.3.5 Output Match 4pmeu:26 5.3.6 Inter-stage Match }\ _.Mg^y 5.3.7 Amplifier Bandwidth Enhancement ?hoOSur+ 5.3.8 Four Stage 30 – 50 GHz LNA [4KQcmJc# 5.3.9 Measurements
5.2.1 Introduction {Jr1K, 5.2.2 57 GHz LNA Design Details 5LeZ ?'"c 5.2.3 57 GHz LNA Characterisation A40DbD\^ad 5.2.4 Discussion
6.3.1 Single-Ended Diode Mixers #G9 W 65 f 6.3.2 Sub-Harmonically Pumped Diode Mixers 4 jT6 h9% 6.3.3 FET Mixers
6.5.1 Simulation Tool Settings Specific to Mixer Design .)E#*kLWR 6.5.2 Single-Ended FET Mixer Topologies – Intuitive Study and 57 GHz Down Converter Simulations I}$`gUXX8x 6.5.3 Detailed FET Mixer Schematic Development %h. zkocM 6.5.4 Balanced FET Mixer Design Details MT6p@b5 6.5.5 Schottky Diode Mixer Design Considerations Bfb~<rs[ 6.5.6 Balanced Diode Mixer Design Details u=`H n-( 6.5.7 MMIC Mixer Evaluations
7.2.1 General Background [@$ SLl^Y 7.2.2 Review of Existing Published Analyses f \&X$g 7.2.3 New Generalized FET Multiplier Analysis Approach
7.3.1 Practical Single-Ended MMIC Multiplier Introduction EEe$A?a; 7.3.2 56 GHz MMIC Frequency Tripler !$)reaS 7.3.3 40 GHz Frequency Doubler <^S\&v1C_ 7.3.4 Practical Single-Ended Multiplier Design Conclusions
7.4.1 Balanced Frequency Multiplier Introduction iSfRJ:_&6 7.4.2 Balanced Frequency Multiplier Theory d<c 29Y 7.4.3 Frequency Doubler Configuration Review e=]SIR()` 7.4.4 Frequency Tripler Configuration Review 0aT:Gy; 7.4.5 A Novel Generalised Balanced Frequency Multiplier Approach Jb ,54uN 7.4.6 Balanced Frequency Multiplier Recommendations o Xo>p l 7.4.7 Balanced Frequency Multiplier Conclusions
7.5.1 High Frequency High Power Generation Introduction z']6C9m} 7.5.2 Current State of the Art Review '1u?-2 7.5.3 Potential MMIC Multiplier Schemes Y1r$;;sH 7.5.4 Non-Linear mm-Wave Device Models ^sv|m" 7.5.5 Non-Linear Building Block Circuit Designs =%_=!% 7.5.6 Chain Responses /*C!]Z>. 7.5.7 Optimum X2X2 Chain Development N2:Hdu : 7.5.8 High Power mm-Wave Generation Analysis Conclusions
9.2.1 Amplifiers HDm]njF%qQ 9.2.2 Mixers @&T' h}|: 9.2.3 Frequency Multipliers
9.3.1 Based on This Work ]($ \7 + 9.3.2 General MMIC Field
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