[射频]【英文】Millimeter-Wave Integrated Circuits ——2005年版（超清晰）

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作者：Eoin Carey ，Sverre Lidholm   2005年出版

   Publisher: Springer 2004 | 272 Pages | ISBN: 0387236651 | PDF |

      This book will consist of a detailed overview of MMIC design, specifically focusing on designs for the millimeter-wave (mm-wave) frequency range. The scope of the book will be quite broad, and will include detailed discussions on high frequency materials and technologies, high frequency devices, and the design of high frequency circuits. The design material will be supplemented as appropriate by theoretical analyses. The broad scope of the book will give the reader a good theoretical and practical understanding of mm-wave circuit design.

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Contents

Dedication

Preface

Acknowledgments

1. An Introduction to mm-Wave Integrated Circuits
1.1 Introduction
1.2 Motivation for mm-Waves
1.3 Motivation for Monolithic GaAs Integrated Circuits
1.4 Motivation for Improved Fundamental Circuit Understanding
1.5 Key Components
1.6 Structure of this Work

2. High Frequency Materials and Technology
2.1 Introduction
2.2 Electrical Characteristics of Ideal High-Frequency Semiconductor
2.3 Electrical Characteristics of Real High Frequency Materials

2.3.1 Gallium Arsenide (GaAs) >@2l/x8;
2.3.2 GaAs / Si Comparison rt7Ma2tK
2.3.3 InP [I`r[u
2.3.4 Other III-V Compound Semiconductors ]m#.MZe
2.3.5 InGaAs

2.4 III-V Compound Semiconductor Fabrication Techniques
2.5 GaAs Fabrication Technology

2.5.1Crystal Growth wW7W+,{o
2.5.2Epitaxy 7VF^&6
2.5.3Ion Implantation WhO;4-q)2
2.5.4GaAs Dopants @aG1PG{
2.5.5Schottky and Ohmic Contacts

2.6 Considerations for the Realisation of Effective Monolithic mm-Wave Circuit Layouts

2.6.1 Schematic Optimisation Consistent with Good mm-Wave Layout Practice \LFRu
2.6.2 Consideration of Foundry Element Limitations [w%MECTe
2.6.3 Probing Considerations Z=ayVsJ3
2.6.4 Dicing/Sawing Considerations @$5GxIw<l
2.6.5 Packaging Impact on Performance

2.7 Future Trends

3. High Frequency Devices
3.1 Introduction
3.2 High Frequency Devices

3.2.1 Background !bnuCc
3.2.2 Schottky Diode Wdt9k.hzN
3.2.3 MESFET <p48?+K9
3.2.4 Modern FET Variants ~zklrBn&
3.2.5 FET Equivalent Circuit C-;y#a)
3.2.6 Fundamental FET Circuit Relationships \iQD\=o
3.2.7 GaAs Hetero-Junction Bipolar Transistor O1@-)<_71
3.2.8 Silicon based High Frequency Devices and Circuits

3.3 The Future…

4. High-Volume mm-Wave Circuits
4.1 The Challenge
4.2 Transceiver Configurations for mm-Waves

4.2.1 Existing Solutions _Ee`Uk
4.2.2 Monolithic Solution

4.3 Integrated Monolithic Transceiver Considerations
4.4 The Goal

5. Low Noise mm-Wave Amplifiers

5.1 Introduction zMfr`&%e
5.2 Conventional 57.2 – 58.2 GHz LNA Development {emO&#=@CP
5.2.1 Introduction YfC1.8
5.2.2 57 GHz LNA Design Details KzRw)P
5.2.3 57 GHz LNA Characterisation Ni5~Buf
5.2.4 Discussion
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5.3 New LNA Design Methodology W;]*&P[[
5.3.1 Considerations at mm-Waves x1m J&D
5.3.2 Device Stabilisation ckqU2ETpD}
5.3.3 Packaging Considerations ^X6fgsjz
5.3.4 Noise/Match Tradeoff `;7^@k
5.3.5 Output Match wVvk{tS
5.3.6 Inter-stage Match O a_2J#~$
5.3.7 Amplifier Bandwidth Enhancement Zho d%n3
5.3.8 Four Stage 30 – 50 GHz LNA {:&t;5qz^
5.3.9 Measurements

5.4 Discussion
5.5 Conclusion

6. Monolithic Mixers
6.1 Introduction
6.2 Microwave Mixers – Some Considerations
6.3 Monolithic Mixer Architectures

6.3.1 Single-Ended Diode Mixers eRC /Pr
6.3.2 Sub-Harmonically Pumped Diode Mixers $_-f}E
6.3.3 FET Mixers

6.4 FET Mixers – Prior Art in the Context of Theory and Practical Realisation from the Literature
6.5 Original Mixer Study, Design and Evaluation

6.5.1 Simulation Tool Settings Specific to Mixer Design AL/q6PWi
6.5.2 Single-Ended FET Mixer Topologies – Intuitive Study and 57 GHz Down Converter Simulations ^CUeq"GYoZ
6.5.3 Detailed FET Mixer Schematic Development .6%-Il
6.5.4 Balanced FET Mixer Design Details j2T Z`Z?a^
6.5.5 Schottky Diode Mixer Design Considerations @[0zZX2EE
6.5.6 Balanced Diode Mixer Design Details ]HP aM
6.5.7 MMIC Mixer Evaluations

6.6 Discussion
6.7 Conclusion
6.8 Likely Future Trends

7. FET Frequency Multipliers
7.1 Introduction
7.2 Theoretical Analysis of Single-ended FET Multiplier

7.2.1 General Background -LL49P6
7.2.2 Review of Existing Published Analyses BN&^$1F((
7.2.3 New Generalized FET Multiplier Analysis Approach

7.3 Practical Single-Ended MM-wave MMIC Frequency Multipliers

7.3.1 Practical Single-Ended MMIC Multiplier Introduction .jRp.U
7.3.2 56 GHz MMIC Frequency Tripler ^[}^+
7.3.3 40 GHz Frequency Doubler n?*Fr sZ
7.3.4 Practical Single-Ended Multiplier Design Conclusions

7.4 Balanced Frequency Multiplier Considerations

7.4.1 Balanced Frequency Multiplier Introduction `}gjfu -'\
7.4.2 Balanced Frequency Multiplier Theory 1hj']#vBu
7.4.3 Frequency Doubler Configuration Review 0 ;$[
7.4.4 Frequency Tripler Configuration Review c&.>SR')
7.4.5 A Novel Generalised Balanced Frequency Multiplier Approach +E7s[9/r
7.4.6 Balanced Frequency Multiplier Recommendations ^PIUA'
7.4.7 Balanced Frequency Multiplier Conclusions

7.5 High Power Generation at mm-Wave Frequencies using FET Multipliers

7.5.1 High Frequency High Power Generation Introduction q.0a0/R
7.5.2 Current State of the Art Review &wsxH4
7.5.3 Potential MMIC Multiplier Schemes 5v4 ,YHD
7.5.4 Non-Linear mm-Wave Device Models q/,>UtRr
7.5.5 Non-Linear Building Block Circuit Designs 4y&%YLMpl
7.5.6 Chain Responses Jg=[!j0(
7.5.7 Optimum X2X2 Chain Development 8 /1 sy.R
7.5.8 High Power mm-Wave Generation Analysis Conclusions

7.6 Multiplier Conclusions

8. Practical Monolithic Transceiver
8.1 Introduction
8.2 Transceiver Topology
8.3 Transceiver Layout
8.4 Expected Performance
8.5 Measured Performance
8.6 Conclusions

9. General Discussion and Future Trends
9.1 Introduction
9.2 This Work and its Place in the General Field