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2.3.1 Gallium Arsenide (GaAs) f&I7,"v 2.3.2 GaAs / Si Comparison {d!Y3+I%G 2.3.3 InP HOPqxI(k 2.3.4 Other III-V Compound Semiconductors ?U9 /fl 2.3.5 InGaAs
2.5.1Crystal Growth ])T/sO#' 2.5.2Epitaxy Es8#]'Rk 2.5.3Ion Implantation ]0~qi@ 2.5.4GaAs Dopants n9oR)&:o 2.5.5Schottky and Ohmic Contacts
2.6.1 Schematic Optimisation Consistent with Good mm-Wave Layout Practice {B{i(6C( 2.6.2 Consideration of Foundry Element Limitations z+VV}:Q 2.6.3 Probing Considerations ycpE=fso' 2.6.4 Dicing/Sawing Considerations 32>x^>G=> 2.6.5 Packaging Impact on Performance
3.2.1 Background Rlw3!]5+2 3.2.2 Schottky Diode Ft-6m% 3.2.3 MESFET |C-y}iQ:6~ 3.2.4 Modern FET Variants I:;+n^N? 3.2.5 FET Equivalent Circuit +zO]N& 3.2.6 Fundamental FET Circuit Relationships ~j&?/{7I 3.2.7 GaAs Hetero-Junction Bipolar Transistor ~@9zil41 3.2.8 Silicon based High Frequency Devices and Circuits
4.2.1 Existing Solutions X"/~4\tJ" 4.2.2 Monolithic Solution
5.1 Introduction "tR}j,=S:D 5.2 Conventional 57.2 – 58.2 GHz LNA Development V SAafux 5.2.1 Introduction Fd8hGj1 5.2.2 57 GHz LNA Design Details -Ktwo_V* 5.2.3 57 GHz LNA Characterisation {;n0/ 5.2.4 Discussion h~UJCnzS 5.3 New LNA Design Methodology 80&D"" 5.3.1 Considerations at mm-Waves p;->hn~D'5 5.3.2 Device Stabilisation qgexb\x\4 5.3.3 Packaging Considerations Y!n'" *J> 5.3.4 Noise/Match Tradeoff Y5%;p33uFG 5.3.5 Output Match o#{#r@,i 5.3.6 Inter-stage Match ^k72{ 3N( 5.3.7 Amplifier Bandwidth Enhancement 7),*3c ') 5.3.8 Four Stage 30 – 50 GHz LNA AQh["1{yJ 5.3.9 Measurements
5.2.1 Introduction Fd8hGj1 5.2.2 57 GHz LNA Design Details -Ktwo_V* 5.2.3 57 GHz LNA Characterisation {;n0/ 5.2.4 Discussion
6.3.1 Single-Ended Diode Mixers 6>B \| 6.3.2 Sub-Harmonically Pumped Diode Mixers VGJDqm! 6.3.3 FET Mixers
6.5.1 Simulation Tool Settings Specific to Mixer Design !5.v'K' 6.5.2 Single-Ended FET Mixer Topologies – Intuitive Study and 57 GHz Down Converter Simulations fM:80bnL+ 6.5.3 Detailed FET Mixer Schematic Development EfSMFPM 6.5.4 Balanced FET Mixer Design Details k3yxx]Rk/ 6.5.5 Schottky Diode Mixer Design Considerations <}2A=~ _ 6.5.6 Balanced Diode Mixer Design Details 3o0IjZ=[> 6.5.7 MMIC Mixer Evaluations
7.2.1 General Background *k6$ 7.2.2 Review of Existing Published Analyses 2np-Fc{S 7.2.3 New Generalized FET Multiplier Analysis Approach
7.3.1 Practical Single-Ended MMIC Multiplier Introduction VjTAN= 7.3.2 56 GHz MMIC Frequency Tripler hht+bpHl 7.3.3 40 GHz Frequency Doubler .v l="< 7.3.4 Practical Single-Ended Multiplier Design Conclusions
7.4.1 Balanced Frequency Multiplier Introduction t>oM%/H 7.4.2 Balanced Frequency Multiplier Theory -W^2*w 7.4.3 Frequency Doubler Configuration Review Ar5JP_M`E 7.4.4 Frequency Tripler Configuration Review W-XN4:,qI 7.4.5 A Novel Generalised Balanced Frequency Multiplier Approach %kW3hQ<$ 7.4.6 Balanced Frequency Multiplier Recommendations Y3M','H([ 7.4.7 Balanced Frequency Multiplier Conclusions
7.5.1 High Frequency High Power Generation Introduction R `Q?J[e 7.5.2 Current State of the Art Review Y[,U_GX/R 7.5.3 Potential MMIC Multiplier Schemes G5+]DogS 7.5.4 Non-Linear mm-Wave Device Models +/_!P;I 7.5.5 Non-Linear Building Block Circuit Designs P:a*t[+ 7.5.6 Chain Responses {~1M 7.5.7 Optimum X2X2 Chain Development +V89J!7 7.5.8 High Power mm-Wave Generation Analysis Conclusions
9.2.1 Amplifiers d-i&k(M 9.2.2 Mixers yh$ ~*UV 9.2.3 Frequency Multipliers
9.3.1 Based on This Work qKx59 9.3.2 General MMIC Field
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