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2.3.1 Gallium Arsenide (GaAs) P%Ay3cR+E 2.3.2 GaAs / Si Comparison GO! uwo: 2.3.3 InP OndhLLz 2.3.4 Other III-V Compound Semiconductors %b?$@H-Re 2.3.5 InGaAs
2.5.1Crystal Growth 6O2=Ns;J6 2.5.2Epitaxy 7:NmCpgL! 2.5.3Ion Implantation RQW6N??C 2.5.4GaAs Dopants v=I| O% 2.5.5Schottky and Ohmic Contacts
2.6.1 Schematic Optimisation Consistent with Good mm-Wave Layout Practice .r+hERcB 2.6.2 Consideration of Foundry Element Limitations uqyB5V 0gh 2.6.3 Probing Considerations E3/:.t 2.6.4 Dicing/Sawing Considerations K:y^OAZfV 2.6.5 Packaging Impact on Performance
3.2.1 Background W&"|} Pi/ 3.2.2 Schottky Diode V+wH?H= 3.2.3 MESFET Uf *E J1Ei 3.2.4 Modern FET Variants bVr*h2 p 3.2.5 FET Equivalent Circuit )< 4 _ : 3.2.6 Fundamental FET Circuit Relationships L3(^{W]| 3.2.7 GaAs Hetero-Junction Bipolar Transistor c:M$m3Cs? 3.2.8 Silicon based High Frequency Devices and Circuits
4.2.1 Existing Solutions k /EDc533d 4.2.2 Monolithic Solution
5.1 Introduction fn{S "33" 5.2 Conventional 57.2 – 58.2 GHz LNA Development S(eQ{r Ss 5.2.1 Introduction BRG|Asg( 5.2.2 57 GHz LNA Design Details O,V9R rG 5.2.3 57 GHz LNA Characterisation &217l2X / 5.2.4 Discussion ~H@+D}J? 5.3 New LNA Design Methodology ekf$dgoR 5.3.1 Considerations at mm-Waves ^%oUmwP<$ 5.3.2 Device Stabilisation $<?X7n^ 5.3.3 Packaging Considerations cX2^wu 5.3.4 Noise/Match Tradeoff xcCl (M]+ 5.3.5 Output Match H ;@!?I 5.3.6 Inter-stage Match cJ}QXuuUv 5.3.7 Amplifier Bandwidth Enhancement ZX`J8lZP 5.3.8 Four Stage 30 – 50 GHz LNA `kN #4p 5.3.9 Measurements
5.2.1 Introduction BRG|Asg( 5.2.2 57 GHz LNA Design Details O,V9R rG 5.2.3 57 GHz LNA Characterisation &217l2X / 5.2.4 Discussion
6.3.1 Single-Ended Diode Mixers iT )WR90 6.3.2 Sub-Harmonically Pumped Diode Mixers v$|mo;6 6.3.3 FET Mixers
6.5.1 Simulation Tool Settings Specific to Mixer Design sJr5t? 6.5.2 Single-Ended FET Mixer Topologies – Intuitive Study and 57 GHz Down Converter Simulations 0??Yr 6.5.3 Detailed FET Mixer Schematic Development U_z2J(e~ 6.5.4 Balanced FET Mixer Design Details q{4|Kpx@ 6.5.5 Schottky Diode Mixer Design Considerations 3-wD^4)O, 6.5.6 Balanced Diode Mixer Design Details {0jIY 6.5.7 MMIC Mixer Evaluations
7.2.1 General Background /-*hjX$n 7.2.2 Review of Existing Published Analyses &&RA4 7.2.3 New Generalized FET Multiplier Analysis Approach
7.3.1 Practical Single-Ended MMIC Multiplier Introduction ,=w!vO5s 7.3.2 56 GHz MMIC Frequency Tripler Y\t_& px 7.3.3 40 GHz Frequency Doubler : 1)}Epo, 7.3.4 Practical Single-Ended Multiplier Design Conclusions
7.4.1 Balanced Frequency Multiplier Introduction x(r+ P9f\< 7.4.2 Balanced Frequency Multiplier Theory ?AsDk ~3 7.4.3 Frequency Doubler Configuration Review 9 k2 ,3It 7.4.4 Frequency Tripler Configuration Review x6yW:tUG5 7.4.5 A Novel Generalised Balanced Frequency Multiplier Approach Xza4iV 7.4.6 Balanced Frequency Multiplier Recommendations pVokgUrC 7.4.7 Balanced Frequency Multiplier Conclusions
7.5.1 High Frequency High Power Generation Introduction c]m! G'L_/ 7.5.2 Current State of the Art Review N7. @FK 7.5.3 Potential MMIC Multiplier Schemes {gk wOMW 7.5.4 Non-Linear mm-Wave Device Models ;( K MGir 7.5.5 Non-Linear Building Block Circuit Designs !ng\` |8? 7.5.6 Chain Responses Q9y*: 7.5.7 Optimum X2X2 Chain Development }ymvC 7.5.8 High Power mm-Wave Generation Analysis Conclusions
9.2.1 Amplifiers X5E ' *W 9.2.2 Mixers Gp1EJ2d8 9.2.3 Frequency Multipliers
9.3.1 Based on This Work #MM &BC 9.3.2 General MMIC Field
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