[射频]【英文】Millimeter-Wave Integrated Circuits ——2005年版（超清晰）

作者：Eoin Carey ，Sverre Lidholm   2005年出版 T8?Ghbn  
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   Publisher: Springer 2004 | 272 Pages | ISBN: 0387236651 | PDF | 58}U^IW  
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      This book will consist of a detailed overview of MMIC design, specifically focusing on designs for the millimeter-wave (mm-wave) frequency range. The scope of the book will be quite broad, and will include detailed discussions on high frequency materials and technologies, high frequency devices, and the design of high frequency circuits. The design material will be supplemented as appropriate by theoretical analyses. The broad scope of the book will give the reader a good theoretical and practical understanding of mm-wave circuit design. :_`F{rDB  
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Contents RWZSQ~  
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Dedication R4cM%l_#W  
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Preface prF%.(G2)  
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Acknowledgments I-*S&SiXjI  
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1. An Introduction to mm-Wave Integrated Circuits %)W2H^  
1.1  Introduction } 9Eg=%0v  
1.2 Motivation for mm-Waves  skViMo  
1.3 Motivation for Monolithic GaAs Integrated Circuits 19)i*\+  
1.4 Motivation for Improved Fundamental Circuit Understanding L|xbR#v  
1.5 Key Components xGg )Y#  
1.6 Structure of this Work }@+0/W?\.  
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2. High Frequency Materials and Technology PiIpnoM  
2.1 Introduction #OD/$f_  
2.2 Electrical Characteristics of Ideal High-Frequency Semiconductor S`0(*A[W*  
2.3 Electrical Characteristics of Real High Frequency Materials $a"Oc   

2.3.1 Gallium Arsenide (GaAs) %T%sGDCV  
2.3.2 GaAs / Si Comparison 1};Stai'  
2.3.3 InP l<LI7Z]A  
2.3.4 Other III-V Compound Semiconductors h(_57O:  
2.3.5 InGaAs

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2.4 III-V Compound Semiconductor Fabrication Techniques xF'EiX~  
2.5 GaAs Fabrication Technology Id .nu/  

2.5.1Crystal Growth $ @`V  
2.5.2Epitaxy '9J/T57]e  
2.5.3Ion Implantation ]72`};  
2.5.4GaAs Dopants )23H1  
2.5.5Schottky and Ohmic Contacts

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2.6 Considerations for the Realisation of Effective Monolithic mm-Wave Circuit Layouts [D4SW#  

2.6.1 Schematic Optimisation Consistent with Good mm-Wave Layout Practice }rw
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2.6.2 Consideration of Foundry Element Limitations BLiF 5  
2.6.3 Probing Considerations 7'V@+5
 
2.6.4 Dicing/Sawing Considerations f+,qNvBY/  
2.6.5 Packaging Impact on Performance

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2.7 Future Trends DU/]  
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3. High Frequency Devices m@v\(rT.  
3.1 Introduction K=h9Ce  
3.2 High Frequency Devices N +_t-5  

3.2.1 Background c9u`!'g`i  
3.2.2 Schottky Diode &.Qrs:U  
3.2.3 MESFET SsDmoEeB[  
3.2.4 Modern FET Variants !ons]^km  
3.2.5 FET Equivalent Circuit y
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3.2.6 Fundamental FET Circuit Relationships mnX2a  
3.2.7 GaAs Hetero-Junction Bipolar Transistor @9RM9zK.q  
3.2.8 Silicon based High Frequency Devices and Circuits

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3.3 The Future… K;H&n1  
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4. High-Volume mm-Wave Circuits Z
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4.1 The Challenge #'szP\  
4.2 Transceiver Configurations for mm-Waves YZ8>OwQz2  

4.2.1 Existing Solutions 0-Ku7<a  
4.2.2 Monolithic Solution

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4.3 Integrated Monolithic Transceiver Considerations `e&Suyf4B  
4.4 The Goal FGmb<z 2p  
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5. Low Noise mm-Wave Amplifiers !PQ<04jA!  

5.1 Introduction ]Q3ADh  
5.2 Conventional 57.2 – 58.2 GHz LNA Development %pL''R9VF  

5.2.1 Introduction 4p;`C  
5.2.2 57 GHz LNA Design Details :{l_FY436  
5.2.3 57 GHz LNA Characterisation Js?]$V"  
5.2.4 Discussion

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5.3 New LNA Design Methodology 16(QR-  
5.3.1 Considerations at mm-Waves !F'YDjTot  
5.3.2 Device Stabilisation uZKr  
5.3.3 Packaging Considerations `l[c_%Bm  
5.3.4 Noise/Match Tradeoff D'DfJwA  
5.3.5 Output Match SZ'R59Ee<  
5.3.6 Inter-stage Match KRRdXx\~  
5.3.7 Amplifier Bandwidth Enhancement $G@5qxcV  
5.3.8 Four Stage 30 – 50 GHz LNA !?h;wR  
5.3.9 Measurements

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5.4 Discussion iz PDd{[  
5.5 Conclusion 3bH'H*2  
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6. Monolithic Mixers qfm|@v|De5  
6.1 Introduction n 0L^e  
6.2 Microwave Mixers – Some Considerations ?NsW|w_  
6.3 Monolithic Mixer Architectures x g  

6.3.1 Single-Ended Diode Mixers d/kv|$XW  
6.3.2 Sub-Harmonically Pumped Diode Mixers xY(*.T9K  
6.3.3 FET Mixers

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6.4 FET Mixers – Prior Art in the Context of Theory and Practical Realisation from the Literature 7[XRd9a5(  
6.5 Original Mixer Study, Design and Evaluation -C]5>& W  

6.5.1 Simulation Tool Settings Specific to Mixer Design QlU8uI[dk  
6.5.2 Single-Ended FET Mixer Topologies – Intuitive Study and 57 GHz Down Converter Simulations &B1WtW
 
6.5.3 Detailed FET Mixer Schematic Development Y.rsR6  
6.5.4 Balanced FET Mixer Design Details _)m]_eS._  
6.5.5 Schottky Diode Mixer Design Considerations WW~sNC\3`(  
6.5.6 Balanced Diode Mixer Design Details fr6fj  
6.5.7 MMIC Mixer Evaluations

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6.6 Discussion h3 }OX{k  
6.7 Conclusion I1M%J@Cz  
6.8 Likely Future Trends [sjosV  
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7. FET Frequency Multipliers "@0]G<H  
7.1 Introduction {_p_%;  
7.2 Theoretical Analysis of Single-ended FET Multiplier t-bB>q#3>  

7.2.1 General Background hhc,uJ">!  
7.2.2 Review of Existing Published Analyses )Y{L&A  
7.2.3 New Generalized FET Multiplier Analysis Approach

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7.3 Practical Single-Ended MM-wave MMIC Frequency Multipliers ]&+s6{}  

7.3.1 Practical Single-Ended MMIC Multiplier Introduction 3;]H1 1  
7.3.2 56 GHz MMIC Frequency Tripler
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7.3.3 40 GHz Frequency Doubler =dYqS[kJW  
7.3.4 Practical Single-Ended Multiplier Design Conclusions

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7.4 Balanced Frequency Multiplier Considerations @`- 4G2IU}  

7.4.1 Balanced Frequency Multiplier Introduction KB(8f*  
7.4.2 Balanced Frequency Multiplier Theory z<XtS[ki
 
7.4.3 Frequency Doubler Configuration Review ,w4V?>l  
7.4.4 Frequency Tripler Configuration Review h J)h
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7.4.5 A Novel Generalised Balanced Frequency Multiplier Approach R$[vm6T?  
7.4.6 Balanced Frequency Multiplier Recommendations fuf"Ae  
7.4.7 Balanced Frequency Multiplier Conclusions

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7.5 High Power Generation at mm-Wave Frequencies using FET Multipliers r52gn(,  

7.5.1 High Frequency High Power Generation Introduction w%jII{@,  
7.5.2 Current State of the Art Review n9ej7
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7.5.3 Potential MMIC Multiplier Schemes [/41%B2  
7.5.4 Non-Linear mm-Wave Device Models
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7.5.5 Non-Linear Building Block Circuit Designs .Vvx
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7.5.6 Chain Responses [5Mr@f4I  
7.5.7 Optimum X2X2 Chain Development =MDysb&:  
7.5.8 High Power mm-Wave Generation Analysis Conclusions

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7.6 Multiplier Conclusions @<EO`L)Z  
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8. Practical Monolithic Transceiver 12gU{VD  
8.1 Introduction z_4J)?3  
8.2 Transceiver Topology jasy<IqT!{  
8.3 Transceiver Layout u <v7;dF|s  
8.4  Expected Performance H8}oIA"b  
8.5 Measured Performance 6A+nS=  
8.6  Conclusions LBDjIpR6  
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9. General Discussion and Future Trends Si;H0uPO  
9.1 Introduction _g"<UV*H  
9.2 This Work and its Place in the General Field q(W3i^778  

9.2.1 Amplifiers VQOezQs\  
9.2.2 Mixers dJNe+ MB`  
9.2.3 Frequency Multipliers

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9.3 Future Developments *_\_'@1|J)  

9.3.1 Based on This Work lZKi'vg7  
9.3.2 General MMIC Field

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References -;WGS o  
Index

谢谢啊，先下载看看啊

好书啊，很前沿

很好啊！！超清

应该是一个好的西，下载下来看看

KANKAN谢谢分享

回复是必须的，也是必需地。

很不错的一本书，值得一看，多谢！

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