UID :60178
2.3.1 Gallium Arsenide (GaAs) 4)iSz> 2.3.2 GaAs / Si Comparison :a}hd^;[%8 2.3.3 InP 7 #_{UJ% 2.3.4 Other III-V Compound Semiconductors <?,o { 2.3.5 InGaAs
2.5.1Crystal Growth {y'c*NS 2.5.2Epitaxy }@}jwi)l 2.5.3Ion Implantation (hVhzw"~ 2.5.4GaAs Dopants O GrVy=rd 2.5.5Schottky and Ohmic Contacts
2.6.1 Schematic Optimisation Consistent with Good mm-Wave Layout Practice -.1x! ~.jX 2.6.2 Consideration of Foundry Element Limitations rZ1${/6 2.6.3 Probing Considerations B[Uvj~g 2.6.4 Dicing/Sawing Considerations L!DP*XDp 2.6.5 Packaging Impact on Performance
3.2.1 Background $r9Sn 3.2.2 Schottky Diode <O>r e3s 3.2.3 MESFET [z`U9J 3.2.4 Modern FET Variants cI'&gT5 3.2.5 FET Equivalent Circuit 3t(nV4uDF 3.2.6 Fundamental FET Circuit Relationships '>Y"s| 3.2.7 GaAs Hetero-Junction Bipolar Transistor z:|4S@9 3.2.8 Silicon based High Frequency Devices and Circuits
4.2.1 Existing Solutions Q,Hw@w<1 4.2.2 Monolithic Solution
5.1 Introduction Ip( IGR" 5.2 Conventional 57.2 – 58.2 GHz LNA Development DTt/nmKAqJ 5.2.1 Introduction _{KQQ5k\ 5.2.2 57 GHz LNA Design Details >"B95$x5 5.2.3 57 GHz LNA Characterisation *8fnxWR 5.2.4 Discussion xRJv_=dT 5.3 New LNA Design Methodology Ezm ~SY 5.3.1 Considerations at mm-Waves F>)u<f,C 5.3.2 Device Stabilisation ZyT9y 5.3.3 Packaging Considerations c{6!}0Q4 5.3.4 Noise/Match Tradeoff "MKgU[t 5.3.5 Output Match .3A66 O~zT 5.3.6 Inter-stage Match \Zqgr/.w/ 5.3.7 Amplifier Bandwidth Enhancement ^:\|6`{n 5.3.8 Four Stage 30 – 50 GHz LNA 7Xm pq&g 5.3.9 Measurements
5.2.1 Introduction _{KQQ5k\ 5.2.2 57 GHz LNA Design Details >"B95$x5 5.2.3 57 GHz LNA Characterisation *8fnxWR 5.2.4 Discussion
6.3.1 Single-Ended Diode Mixers %:N6#;l M 6.3.2 Sub-Harmonically Pumped Diode Mixers ITRv^IlF 6.3.3 FET Mixers
6.5.1 Simulation Tool Settings Specific to Mixer Design UC;_}> 6.5.2 Single-Ended FET Mixer Topologies – Intuitive Study and 57 GHz Down Converter Simulations \D<rT)Tl 6.5.3 Detailed FET Mixer Schematic Development *;(LKRV 6.5.4 Balanced FET Mixer Design Details pRD8/7@(B{ 6.5.5 Schottky Diode Mixer Design Considerations ,-&ler~[ 6.5.6 Balanced Diode Mixer Design Details ^LE`Y>&m 6.5.7 MMIC Mixer Evaluations
7.2.1 General Background "?EA G 7.2.2 Review of Existing Published Analyses B5IS-d 7.2.3 New Generalized FET Multiplier Analysis Approach
7.3.1 Practical Single-Ended MMIC Multiplier Introduction ~C{d2i 7.3.2 56 GHz MMIC Frequency Tripler !%_Z>a 7.3.3 40 GHz Frequency Doubler +iir]"8 7.3.4 Practical Single-Ended Multiplier Design Conclusions
7.4.1 Balanced Frequency Multiplier Introduction Fa,a)JY> 7.4.2 Balanced Frequency Multiplier Theory k+{-iPm{ 7.4.3 Frequency Doubler Configuration Review jmmm0,#D 7.4.4 Frequency Tripler Configuration Review '%yWz)P 7.4.5 A Novel Generalised Balanced Frequency Multiplier Approach s@E"EWp0 7.4.6 Balanced Frequency Multiplier Recommendations H*!j\|v0 7.4.7 Balanced Frequency Multiplier Conclusions
7.5.1 High Frequency High Power Generation Introduction [bIdhG 7.5.2 Current State of the Art Review =M>1;Qr<Z/ 7.5.3 Potential MMIC Multiplier Schemes { ,/mQ3 7.5.4 Non-Linear mm-Wave Device Models r+217fS> 7.5.5 Non-Linear Building Block Circuit Designs cXFNX< 7.5.6 Chain Responses Pq>r|/~_ 7.5.7 Optimum X2X2 Chain Development YBN@{P$ 7.5.8 High Power mm-Wave Generation Analysis Conclusions
9.2.1 Amplifiers qYBoo]}a 9.2.2 Mixers f ."bq43( 9.2.3 Frequency Multipliers
9.3.1 Based on This Work ,`v)nwP 9.3.2 General MMIC Field