[其它]A Lumped Coplanar to Microstrip Transition Model for De-Embedding S-Parameters Measured on GAAS Wafe

A Lumped Coplanar to Microstrip Transition Model for De-Embedding S-Parameters Measured on GAAS Wafers QZlUUj\   
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Harvey, Donn ; *l//r V?l  
Boeing Electronics Company, High Technology Center z-DpLV  
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This paper appears in:  ARFTG Conference Digest-Spring, 29th  Issue Date : June 1987                                                                                          --> {aSq3C<r  
Issue Date :  June 1987 Ba6xkEd  
Volume :  11 >MT)=4 9q  
On page(s): 204 - 217 cF2/}m]  
Print ISBN: 0-7803-5686-1 ?KN_J  
Cited by :  1 J$;)TI  
Digital Object Identifier :  10.1109/ARFTG.1987.323866 7h2bL6Y88  
Date of Current Version :   12 三月 2007 ^Ram8fW  
Abstract gm DC,"Y<  
Currently most microwave measurements on GaAs wafers are made using RF probes which are calibrated to the probe tips. When a microstrip circuit or device needs to be measured, errors are introduced as a result of the transition from the coplanar probe tips to the microstrip line. In this paper an equivalent circuit of the transition to microstrip is presented. Knowing the characteristics of this transi .. K="+2]{I  
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