[EMC]Power Converter EMI Analysis Including IGBT Nonlinear Switching Transient Model

Abstract—It is well known that very high dv/dt and di/dt O$D'.t  
during the switching instant is the major high-frequency electromagnetic k=4N(i/s  
interference (EMI) source. This paper proposes an jx.[#6e  
improved and simplified EMI-modeling method considering the 5K^69mx  
insulated gate bipolar transistor switching-behavior model. The WX}xmtLs  
device turn-on and turn-off dynamics are investigated by dividing fLDg~;3  
the nonlinear transition by several stages. The real device switching u)3 $~m~  
voltage and current are approximated by piecewise linear lines #?*WPq  
and expressed using multiple dv/dt and di/dt superposition. Rp*R:3 C  
The derived EMI spectra suggest that the high-frequency noise is \\{J'j>{f  
modeled with an acceptable accuracy. The proposed me .. !Gu%U$d  
5nTY ?<x`k  

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thank u very much

正需要呢，谢谢楼主的分享 =49oU