[EMC]Power Converter EMI Analysis Including IGBT Nonlinear Switching Transient Model

Abstract—It is well known that very high dv/dt and di/dt so.}WU  
during the switching instant is the major high-frequency electromagnetic )!VJ\  
interference (EMI) source. This paper proposes an v;z8g^L  
improved and simplified EMI-modeling method considering the Z?[R;V1j  
insulated gate bipolar transistor switching-behavior model. The 5IzCQqOPgX  
device turn-on and turn-off dynamics are investigated by dividing O+'k4  
the nonlinear transition by several stages. The real device switching Lfa&JKd  
voltage and current are approximated by piecewise linear lines YsCY~e&  
and expressed using multiple dv/dt and di/dt superposition. 1xkk5\3]  
The derived EMI spectra suggest that the high-frequency noise is 9_svtO]P  
modeled with an acceptable accuracy. The proposed me .. v#g:]T  
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thank u very much

正需要呢，谢谢楼主的分享 +1=]93gP