[仿真]High-Power InGaAs/InP Partially Depleted Absorber

Abstract—A 2-D fully coupled electrothermal physical model wkw/AZ{27  
of a p-i-n photodiode, which takes into account external electric w
xrT(x|  
circuit, has been developed. Based on numerical simulation, we 0^^i=iE-u  
present the data on the maximal output microwave power with appropriate \aozecpC`  
optical-to-microwave conversion loss for InGaAsP/InP 3~'F^=T.Y  
partially depleted absorber photodiodes in the frequency range _Fg
eE`X  
from 10 to 60 GHz. omu&
:) g  
Index Terms—Microwave generation, millimeter-wave generation, o~ed0>D-LS  
p-i-n photodiodes, semiconductor d .. R~([  
} U.B$4Q  

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xiexie fenxiang

haiyincang

xiexie fenxiang

very happy find it