[仿真]A PHYSICS-BASED MESFET EMPIRICAL MODEL

Abstract 4\|Q;@f  
Although physics device models are recognized to `'XN2-M8  
provide interesting advantages over empirical expressions {`M\}(E  
normally used in microwave simulation, little has been done by tw zV-8\  
circuit designers, to exploit the concepts and knowledge =Gzs+6A8  
gathered in that area. wY%t# [T3  
The present work is intended to review some simple t@MUNW`Q  
conclusions drawn from MESFET physics behavior, and to 4<PupJ  
show how they can be used in the development of .. l8+)Xk>  
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