[仿真]A PHYSICS-BASED MESFET EMPIRICAL MODEL

Abstract &?6w2[}  
Although physics device models are recognized to lijy?:__  
provide interesting advantages over empirical expressions cG:`Zj~4  
normally used in microwave simulation, little has been done by GB3B4)cX4Y  
circuit designers, to exploit the concepts and knowledge YC<I|&"  
gathered in that area. X;:xGZ-oY  
The present work is intended to review some simple k Dt)S$N4n  
conclusions drawn from MESFET physics behavior, and to Tt|6N*b'  
show how they can be used in the development of .. kVv <
tw  
}i:'f2/  

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