[仿真]A PHYSICS-BASED MESFET EMPIRICAL MODEL

Abstract bMsECA&  
Although physics device models are recognized to [q1Unm  
provide interesting advantages over empirical expressions }g>kpa0c  
normally used in microwave simulation, little has been done by D z@1rc<B  
circuit designers, to exploit the concepts and knowledge U2bzUxK  
gathered in that area. O16r!6=-n  
The present work is intended to review some simple S.: 7k9  
conclusions drawn from MESFET physics behavior, and to [9OSpq  
show how they can be used in the development of .. Jn=42Q:>  
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