[仿真]Tunable Microwave Load Based on Biased Photoinduced Plasma in Silicon

Abstract—The frequency tuning of a quarter-wave resonator 2MY
-9(no  
using an optoelectronic control is reported. Sharp notch characteristics &BTgISYi  
with a small decibel-insertion loss and tunable frequency qV]p\/a
.  
with matching better than 45 dB are obtained by varying both the T6mbGE*IeE  
optical power and the dc bias. The measured frequency shift is [.:SV|AF#  
more than 60% below the dark resonant frequency and is carried bvn%E H  
out without altering the shape of the response. The biased photoinduced 3kqO5+,C  
plasma (BPP) loading the open terminated microstrip ^#
i3JMq  
line is then analyzed by comparing microwave simulations and Xf 0)i  
measurements. The deduced complex load equivalent to this y#tuwzE  
biased photoinduced plasma is then confirmed by semiconductor jR1t&UD3Y  
simulations. Results show the great possibilities offered by this u*}[fQ`aF  
BPP load (BPPL), which can be easily and widely tuned by means VgGMlDl  
of a simple optoelectronic control. The frequency bandwidth of T<XGG_NOl  
tuning is limited by the geometrical parameters and may be ufl[sj%^|  
extended to millimeter- .. <KY \sb9  
76 nrDE  

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