有关微波功放的ieee文献

[post]【资料名称】： Dual-Band GaAs FET Power Amplifier o(d_uJOB  
With Two-Frequency Matching Circuits XAU_SPAjiw  
【作者】： Koji Uchida, Yoichiro Takayama, Takayuki Fujita, Kazusuke Maenaka /,Dwu?Lcqp  
Department of Electrical Engineering and Computer Sciences, University of Hyogo aFr!PQp4{  
2167 Shosha, Himeji, Hyogo, 671-2201 Japan `b.o&t$L  
【语言】： 英文 eC^0I78x  
【页数/格式】： pdf 9!xD~(Kr  
【作品日期】: ~ACP%QM=  
【内容摘要】: Abstract- A dual-band GaAs FET power amplifier with the [Zt# c C+  
two-frequency lumped-element matching circuits is designed A eGG  
using the low-pass Chebyshev-form impedance transformer }}``~  
design method. An 800/1500MHz 1Watt-class GaAs FET \at-"[.  
amplifier is fabricated and the experimental results show the :,%J6Zh?  
saturated output powers of 30.9dBm and 28.2dBm with the power <nw<v9Z  
added-efficiencies of 51.6% and 51.9% at 800MHz and 1500MHz, .kbr?N,
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respectively. The fabricated circuit size is 24mm by 28mm. The <=m 30{;f  
presented design approach ena .. vTMP&a'5L  
cbh#E)['  

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顶楼主一个

楼主 加油 啊 呵呵

好贴啊，顶一个

不错啊，有帮组啊

不错啊，有帮组啊 (a#pvEY  
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看看 F,pCR7o>  
是什么东东

顶一个哈哈 。。。。

感谢大家分享

好资料 2Pz5f  
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