[有源]2–8 GHz 8-W Power Amplifier MMIC Developed Using MSAG MESFET Technology

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Author: Inder J. Bahl, Fellow, IEEE {{yt*7k{  
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 18, NO. 1, JANUARY 2008 hZ\+FOx;  
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Abstract—Design approach and test data for a two-octave bandwidth HPA developed using GaAs based multifunction self aligned gate metal semiconductor field effect transistor with multilevel plating monolithic microwave integrated circuit (MMIC) technology are presented. A low loss matching design technique was used in the development of a two-stage power amplifier. The CC >=UF  
broadband amplifier has exhibited 8W power output and better than 16% PAE over the 2.0–8.0 GHz frequency range. To our knowledge, these results represent the state-of-the-art in output QDmYSY$  
power for multi-octave S/C-band power MMIC amplifiers. < .. Oxx^[ju~  
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貌似我有，晕

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正需要这样的论文，谢谢分享····

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