[射频]A dual bias-feed circuit design for SiGe HBT low-noise linear amplifier

Abstract—An SiGe HBT low-noise amplifier (LNA) with a &uv>'S#%  
novel diode/resistor dual base bias-feed circuit is described. The <+ -V5O^  
dual bias-feed circuit extends 1 dB without degradation of 7^n,Tig  
the noise figure (NF). In the small-signal region, a conventional jB*9 !xrd,  
resistor bias-feed circuit is a dominant base current source and, I[tAT
[ <  
in the large-signal region, the diode turns on and the diode ;%v%K+}r  
bias-feed circuit supplies the base current like a voltage source, |3s.;wK  
which allows higher output power and linearity. In this paper, the Ti0 (VdY  
operation principle of the dual bias-feed circuit is explained by cZPbD;e:  
using a virtual current source model, which indicates the increase c ,Qw;  
of base current of the HBT in a large-signal region. The design '~ j
y  
method is also described for the idle current of the diode bias-feed 7~nIaT  
circuit in a small-signal region from the points-of-view of NF and -OHvK
0~  
1 dB. The effectiveness of the dual bias-feed circuit is evaluated =~,$V<+c  
by simulation and measurement. The fabricated 2-GHz-band e@='Q H  
dual bias-feed LNA has the 1 dB improvement of 5 dB and no #k"1wSx16  
degradation NF compared with the conventional resistor bias-feed '=KuJ0`nE9  
LNA. emGV]A%nss  
Inde .. l*~"5f03  
?y+\v'3v  

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谢谢谢谢 '=@-aVp  
您正在看的文章来自RFEDA微波社区--微波仿真论坛 原文地址:http://bbs.rfeda.cn/read.php?tid=26187谢谢 KD[)O7hYC  
您正在看的文章来自RFEDA微波社区--微波仿真论坛 原文地址:http://bbs.rfeda.cn/read.php?tid=26187谢谢 -jcrXskb&N  
您正在看的文章来自RFEDA微波社区--微波仿真论坛 原文地址:http://bbs.rfeda.cn/read.php?tid=26187

谢谢，好东西，

谢谢，好东西，

非常感谢！！！！1

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kankan xian keyijiu xia

好东西，要顶，谢谢

感谢楼主啊。。。。。。。

haoxiang buhuanying