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[仿真]Simulation of Jumps in the Power of a Quasi-Active Microwave LimiterBased on P-I-N Diodes

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注册：2008-10-10
登录：2015-06-19
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0楼发表于: 2008-11-13 21:24:46

Abstract—The reason for jumps observed in the
experimental input–output power characteristic of a GaAs
integrated limiter with a 1.8-μm-thick i-layer at a frequency
of 9.4 GHz is found. The simulation is carried out in the
time domain by numerically solving an initial-value problem
for a nonlinear system of equations describing the electrical
circuit of the limiter. A model of nonlinear elements,
catching and detecting diodes, includes the drift-diffusion
model and the equation for total current. It is shown that
the dependence of the amplitude of the basic harmonic of
the current through the diode on the amplitude of the basic
harmonic of the voltage across the diode represents an
S-shaped curve and that it is such a shape of this curve for
the detecting diode that is responsible for the output power
jumps. The simulation results for the limiter with a 1.2-μmthick
i-layer at frequencies of 3, 9.4, and 25 GHz are also
presented. The amplitude modulation of the output signal ..

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