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[其它]RF_and_Microwave_Semiconductor_Device_Handbook

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0楼发表于: 2010-11-06 11:10:53

RF and Microwave Semiconductor Device Handbook (Hardcover)by Mike Golio (Editor)

Hardcover: 336 pages
Publisher: CRC; 1 edition (October 28, 2002)
Language: English ISBN-10: 084931562X
ISBN-13: 978-0849315626

Review 6qf-Y!D5
A team of 20 authors drawn from industry and academia, under the leadership of Golio of Motorola, has composed this 17-chapter, 310-page handbook…Layout, typography, and particularly the diagrams are exceptionally good. For practicing engineers in industry, government, and academia.
-G. Weiss, emeritus, Polytechnic University

A team of 20 authors drawn from industry and academia, under the leadership of Golio of Motorola, has composed this 17-chapter, 310-page handbook…Layout, typography, and particularly the diagrams are exceptionally good. For practicing engineers in industry, government, and academia.
-G. Weiss, emeritus, Polytechnic University

Overall this is an excellent book and a useful complement to older standard texts. Those readers searching for a book on modern RF semiconductor devices, modeling, and thermal analysis will be very happy.
-Alfy Riddle

Product Description
Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

Contents
1
Varactors
Jan Stake
1.1
Introduction
.............................................................................................................................
1
-1
1.2 Basic Concepts........................................................................................................................
1
-1
1.3
Varactor Applications
.............................................................................................................
1
-5
1.4
Varactor Devices
...................................................................................................................
1
-10
2
Schottky Diode Frequency Multipliers
Jack East
2.1 Introduction ...........................................................................................................................
2
-1
2.2 Schottky Diode Characteristics .............................................................................................
2
-2
2.3 Analytic Descriptions of Diode Multipliers...........................................................................
2
-4
2.4 Computer-Based Design Approaches ...................................................................................
2
-4
2.5 Device Limitations and Alternative Device Structures ........................................................
2
-7
2.6 Summary and Conclusions...................................................................................................
2
-10
3
Transit Time Microwave Devices
Robert J. Trew
3.1 Introduction ...........................................................................................................................
3
-1
3.2 Semiconductor Material Properties ......................................................................................
3
-1
3.3 Two-Terminal Active Microwave Devices ............................................................................
3
-3
Defining Terms ...............................................................................................................................
3
-10
4
Bipolar Junction Transistors
John C. Cowles
4.1 Introduction ...........................................................................................................................
4
-1
4.2 Basic Operation ......................................................................................................................
4
-2
5
Heterostructure Bipolar Transistors
William Liu
5.1 Basic Device Principle.............................................................................................................
5
-1
5.2 Base Current Components ....................................................................................................
5
-7
5.3 Kirk Effects ...........................................................................................................................
5
-12
5.4 Collapse of Current Gain .....................................................................................................
5
-14
5.5 High Frequency Performance ..............................................................................................
5
-16
5.6 Device Fabrication ................................................................................................................
5
-20
6
Metal-Oxide-Semiconductor Field-Effect Transistors
Leonard MacEachern
and Tajinder Manku
6.1 Introduction ...........................................................................................................................
6
-1
6.2 MOSFET Fundamentals ........................................................................................................
6
-2
6.3 CMOS at Radio Frequencies ................................................................................................
6
-10
6.4 MOSFET Noise Sources .......................................................................................................
6
-20
6.5 MOSFET Design for RF Operation......................................................................................
6
-24
6.6 MOSFET Layout ..................................................................................................................
6
-27
6.7 The Future of CMOS ...........................................................................................................
6
-28
7
Metal Semiconductor Field Effect Transistors
Michael S. Shur
7.1 Introduction ............................................................................................................................
7
-1
7.2 Principle of Operation ...........................................................................................................
7
-2
7.3 Properties of Semiconductor Materials Used in MESFET Technology ..............................
7
-4
7.4 Schottky Barrier Contacts.......................................................................................................
7
-5
7.5 MESFET Technology ..............................................................................................................
7
-9
7.6 MESFET Modeling ...............................................................................................................
7
-12
7.7 Hetero-Dimensional (2D MESFETs) ..................................................................................
7
-16
7.8 Applications ..........................................................................................................................
7
-20
8
High Electron Mobility Transistors
Prashant Chavarkar and
Umesh K. Mishra
8.1 Introduction ...........................................................................................................................
8
-1
8.2 HEMT Device Operation and Design ...................................................................................
8
-2
8.3 Scaling Issues in Ultra-High-Speed HEMTs .........................................................................
8
-8
8.4 Material Systems for HEMT Devices .................................................................................. 8-11
8.5 AlGaAs/InGaAs/GaAs Pseudomorphic HEMT (GaAs pHEMT) ...................................... 8-13
8.6 AlInAs/GaInAs/InP (InP HEMT) ....................................................................................... 8-18
8.7 Technology Comparisons..................................................................................................... 8-22
8.8 Conclusion ............................................................................................................................ 8-24
9 RF Power Transistors from Wide Bandgap Materials Karen E. Moore
9.1 Introduction ........................................................................................................................... 9-1
9.2 Figures of Merit for RF Power Transistors ............................................................................ 9-2
9.3 Common RF Power Devices from Wide Bandgap Materials ............................................... 9-3
9.4 Desirable Material Properties for RF Power Transistors ..................................................... 9-7
9.5 State-of-the-Art Wide Bandgap Microwave Transistor Data ............................................ 9-10
9.6 Challenges to Production .................................................................................................... 9-12
9.7 Conclusion ............................................................................................................................ 9-14
10 Monolithic Microwave IC Technology Lawrence P. Dunleavy
10.1 Overview.............................................................................................................................. 10-1
10.2 Basic Principles of GaAs MESFETs and HEMTs................................................................ 10- 7
10.3 MMIC Lumped Elements: Resistors, Capacitors, and Inductors ................................... 10-12
10.4 MMIC Processing and Mask Sets...................................................................................... 10-14
Defining Terms ............................................................................................................................ 10-15
11 Semiconductors Mike Harris
1.1 Introduction ........................................................................................................................ 11-1
11.2 Silicon ................................................................................................................................. 11-2
11.3 Gallium Arsenide ................................................................................................................ 11-2
11.4 III-V Heterostructures .......................................................................................................... 11-7
11.5 Indium Phosphide .............................................................................................................. 11-8
11.6 Silicon Carbide ..................................................................................................................... 11-9
11.7 Gallium Nitride ................................................................................................................. 11-11
11.8 Selected Material Properties ............................................................................................. 11-13
11.9 Etching Processes for Semiconductors ............................................................................. 11-13
11.10 Ohmic and Schottky Contacts .......................................................................................... 11-14
12 Metals Mike Golio
12.1 Introduction ........................................................................................................................ 12-1
12.2 Resistance, Resistivity, and Conductivity ........................................................................... 12-1
12.3 Skin Depth........................................................................................................................... 12-2
12.4 Heat Conduction.................................................................................................................. 12-3
12.5 Temperature Expansion ..................................................................................................... 12-4
12.6 Chemical Properties............................................................................................................. 12-5
12.7 Weight.................................................................................................................................. 12-6
13 RF Package Design and Development Jeanne S. Pavio
13.1 Introduction ......................................................................................................................... 13-1
13.2 Thermal Management ......................................................................................................... 13-2
13.3 Mechanical Design ............................................................................................................... 13-4
13.4 Package Electrical and Electromagnetic Modeling ............................................................. 13-6
13.5 Design Verification, Materials, and Reliability Testing ...................................................... 13-7
13.6 Computer-Integrated Manufacturing.................................................................................. 13-8
13.7 Conclusions .......................................................................................................................... 13-9
14 Thermal Analysis and Design of Electronic Systems Avram Bar-Cohen,
Karl J. Geisler and Allan D. Kraus
14.1 Motivation........................................................................................................................... 14-1
14.2 Thermal Modeling ............................................................................................................... 14-4
14.3 Thermal Resistance Networks ........................................................................................... 14-20
15 Low Voltage/Low Power Microwave Electronics Mike Golio
15.1 Introduction ........................................................................................................................ 15-1
15.2 Motivations for Reduced Voltage ....................................................................................... 15-2
15.3 Semiconductor Materials Technology ............................................................................... 15-3
15.4 Semiconductor Device Technology ................................................................................... 15-4
15.5 Circuit Design ...................................................................................................................... 15-7
15.6 Radio and System Architecture ........................................................................................... 15-8
15.7 Limits to Reductions in Voltage.......................................................................................... 15-9
15.8 Summary ............................................................................................................................ 15-10
16 Technology Computer Aided Design Peter A. Blakey
16.1 Introduction ......................................................................................................................... 16-1
16.2 An Overview of TCAD......................................................................................................... 16-1
16.3 Benefits of TCAD ................................................................................................................. 16-3
16.4 Limitations of TCAD .......................................................................................................... 16-4
16.5 The Role of Calibration ....................................................................................................... 16-4
16.6 Applications of TCAD ......................................................................................................... 16-5
16.7 Application Protocols ......................................................................................................... 16-8
16.8 Conclusions .......................................................................................................................... 16-9
17 Nonlinear Transistor Modeling for Circuit Simulation Walter R. Curtice
17.1 Modeling in General ........................................................................................................... 17-1
17.2 Scope of This Work ................................................................. ..

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