[其它]SiGe Bipolar Transceiver Circuits Operating at 60 GHz

SiGe bipolar transceiver circuits operating at 60 GHz WbJ  
Floyd, B.A.; Reynolds, S.K.; Pfeiffer, U.R.; Zwick, T.; Beukema, T.; Gaucher, B. EV[ BB;eb  
Solid-State Circuits, IEEE Journal of 9][A1+"  
Volume 40, Issue 1, Jan. 2005 Page(s): 156 - 167 apwA  
Digital Object Identifier   10.1109/JSSC.2004.837250 DDBf89$\  
Summary:A low-noise amplifier, direct-conversion quadrature mixer, power amplifier, and voltage-controlled oscillators have been implemented in a 0.12-μm, 200-GHz fT290-GHz fMAX SiGe bipolar technology for operation at 60 GHz. At 61.5 GHz, the two-stage LNA achieves 4.5-dB NF, 15-dB gain, consuming 6 mA from 1.8 V. This is the first known demonstration of a silicon LNA at V-band. The downconverter consists of a preamplifier, I/Q double-balanced mixers, a frequency tripler, and a quadrature generator, and is again the first known demonstration of silicon active mixers at V-band. At 60 GHz, the downconverter gain is 18.6 dB and the NF is 13.3 dB, and the circuit consumes 55 mA from 2.7 V, while the output buffers consume an additional 52 mA. The balanced class-AB PA provides 10.8-dB gain, +11.2-dBm 1-dB compression point, 4.3% maximum PAE, and 16-dBm saturated output power. Finally, fully differential Colpitts VCOs have been implemented at 22 and 67 GHz. The 67-GH .. ,Fzuo:{uy  
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