[仿真]A GaAs MESFET Large-Signal Circuit Model for Nonlinear Analysis

ABSTRACT ;OQ'B=uK  
A large-signal GaAs MESFET model for performing ub`z7gL  
nonlinear microwave simulations with SPICE or :u>W&D  
Microwave SPlCETM and LibraTM programs is `d}W;&c  
described. The model includes accurate analytic _&; ZmNNhc  
representation of the dependence of gm, Cgs, C d C 'B4 mmC  
Ri, and Rds upon operating voltages V s and 4 s : ``(}4a  
The model also functions as a master inear model *D=K{bUe'  
that accurately replicates measured microwave sparameters ->&BcPLn  
at arbitrarily chosen bias points within the >vD['XN,  
transistor's useful operating I-V range. Microwave -O~C m}e  
SPICE harmonic distortion simulations with the model E/wQ+rv  
compare favorably with measurements for an NEC NK+FQ^m[  
NE71000. The model is useful in the analysis of a< .. |`_ <@b  
(j8GiJ]{L,  

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非线性模型~~~~~~~~~~~~~~~~~~谢谢~~~~~~

谢谢，楼猪

非线性模型~~~~~~~~~~~~~~~~~~谢谢~~~~~~

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