[仿真]Coupled Electrothermal and Electromagnetic Modeling, Simulation and equivalent circuit models

Abstract — The design and modeling of power FETs for microwave power amplifiers is described, n
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based on physical and equivalent circuit models coupled to electro-thermal and electromagnetic <EMLiiNY  
simulations. The results from this work reveal complex behavior in large high frequency power devices and facilitate the design of very high power, high efficiency transistors. This approach llows the maximizing of power added efficiency and assists in optimizing the thermal  anagement and circuit design. "8j;k5<  
Index Terms — Power transistors, physical modeling, pHEMT, mi .. Ws}kb@5  
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