[案例]5G N77频段基于BVD的片上带通滤波器

This letter presents a compact on-chip N77 band filter exhibiting high rejection and low insertion loss. A novel design method is proposed to enhance the performance of lumped-element circuits through the analysis of bulk acoustic wave (BAW) resonators. First, the resonant and anti-resonant frequencies of the BAW resonator are optimally designed based on N77 band specifications. We then integrate the resonator in parallel with a simplified source-load coupling network. This integration significantly improves low-end rejection. It also maintains low insertion loss. Following capacitance adjustment, the resonator is replaced with an equivalent Butterworth–Van Dyke (BVD) model, enabling wider resonator bandwidth and effective spurious signal rejection. Analysis of S-parameter magnitude/phase and admittance elucidates the source-load coupling mechanism, which generates transmission zeros (TZs) at both passband edges, thus enhancing selectivity. The filter is fabricated using high-resistivity silicon (HRS) IPD technology. It achieves a compact size of 1.3 × 0.7 mm2. Measurement results show an insertion loss of less than 1.7 dB. The relative bandwidth exceeds 61.3 % across the passband.

该成果使用了法动科技射频EDA工具-UltraEM！

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