[资料]RFIC VCO设计(硕士论文PDF)

[post]Advances in wireless technology have recently led to the potential for higher datarates and greater functionality. Wireless home and business networks and 3G and4G cellular phone systems are promising technologies striving for market acceptance,requiring low-cost, low-power, and compact solutions. One approach to meet thesedemands is system-on-a-chip (SoC) integration, where RF/analog and digital circuitryreside on the same chip, creating a mixed-signal environment. Concurrently, thereis tremendous incentive to utilize Si-based technologies to leverage existing fabrication and design infrastructure and the corresponding economies of scale. While theSoC approach is attractive, it presents major challenges for circuit designers, particularly in the design of monolithic voltage controlled oscillators (VCOs). VCOsare important components in the up or downconversion of RF signals in wirelesstransceivers. VCOs must have very low phase noise and spurious emissions, and beextremely power efficient to meet system requirements. To meet these specifications,VCOs require high-quality factor (Q) tank circuits and reduction of noise from activedevices; however, the lack of high-quality monolithic inductors, along with low noisetransistors in traditional Si technologies, has been a limiting factor.

This thesis presents the design, characterization, and comparison of three monolithic3-4 GHz VCOs and an integrated 5-6 GHz VCO with tunable polyphase outputs.Each VCO is designed around a differential -GM core with an LC tank circuit. Thecircuits exploit two Si-based device technologies: Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) for a cross-coupled collectors circuit and GradedChannel MOS (GC-MOS) transistors for a complementary (CMOS) implementation.The circuits were fabricated using the Motorola 0.4 µm CDR1 SiGe BiCMOS process,which consists of four interconnected metal layers and a thick copper (10 µ ..

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