[资料]射频/微波三维异构集成 (博士论文PDF下载)

[post]High performance RF/mixed signal systems require new interconnect strategies tocombine high frequency (microwave/mm-wave) circuitry with silicon mixed-signaland baseband digital processing. In such systems, heterogeneous vertical integration,in which circuits in different technologies can be stacked on top of each other withinthe system architecture, can reduce the overall system size and power consumption.Chip stacking also enables optimally-performing heterogeneous systems, because eachlevel of the stack can consist of components fabricated in their most suited device orsubstrate technology. Two novel approaches for the vertical interconnection of heterogeneous integrated systems are proposed in this work. These approaches are relatedto flip-chip bonding techniques used in Radio-Frequency (RF)/microwave integratedcircuits.

The first proposed approach involves an interlocking mechanical structure that supports flip-chip assembled Monolithic Microwave Integrated Circuits (MMICs). Photolithographically patterned thick-film SU-8 structures are applied to both the chipand the carrier such that the chip self-aligns into place and mates with the carrier.Gold bumps embedded within the structures electrically connect the chip pads to thecarrier pads. This method is demonstrated through the assembly of a SiGe poweramplifer MMIC onto a high resistivity silicon carrier.

The second proposed approach involves vertical interconnects consisting of room temperature liquid-state metals. The fluid nature of the liquid bumps allows them to berobust in the presence of thermo-mechanical stresses, such as Coefficient of ThermalExpansion (CTE) mismatch between the interconnected chips. SU-8 structures areused to form a shaping mold on the bottom carrier that contains the liquid metal.Gold posts are electroplated on the top chip, then mated with the SU-8 mold, therebymaking contact with the liquid metal to form the electrical continuity.

For each of these proposed methods, design and fabrication considerations are discussed in detail. RF measurements on prototype structures up to Ka band are per-formed to verify the functionality of the proposed methods. Given the results of theseproof-of-concept efforts, electrical characteristics of th ..

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